SPU04N60S5 データシートの表示（PDF） - Infineon Technologies
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SPU04N60S5 Datasheet PDF : 12 Pages
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9 Typ. gate charge
VGS = f (QGate)
parameter: ID = 4.5 A pulsed
SPU04N60S5
16
V
0.2 VDS max
12 0.8 VDS max
10
SPU04N60S5
SPD04N60S5
10 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 1 SPU04N60S5
A
10 0
8
6
4
2
0
0
4
8
12 16 20 nC 26
QGate
10 -1
10 -2
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
11 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
5
A
12 Avalanche energy
EAS = f (Tj)
par.: ID = 3.4 A, VDD = 50 V
160
mJ
4
Tj(START)=25°C
120
3.5
3
100
2.5
80
2
Tj(START)=125°C
60
1.5
40
1
20
0.5
0
10
-3
10 -2
10 -1
10 0
10 1
10 2
Rev. 2.5
µs 10 4
tAR
Page 7
0
20 40 60 80 100 120 °C 160
Tj
2008-04-08
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