SPU01N60C3(2004) データシートの表示（PDF） - Infineon Technologies
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SPU01N60C3 Datasheet PDF : 10 Pages
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Rev. 2.0
SPU01N60C3
SPD01N60C3
5 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 0.5 A, VGS = 10 V
SPU01N60C3
34
Ω
28
6 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
2.5
A
24
20
1.5
16
1
12
8
98%
typ
0.5
4
0
-60 -20 20
60 100 °C
180
Tj
7 Typ. gate charge
VGS = f (QGate)
parameter: ID = 0.8 A pulsed
SPU01N60C3
16
V
0
0
4
8
12
VGS
20
V
8 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 1 SPU01N60C3
A
12
0.2 VDS max
10 0.8 VDS max
10 0
8
6
4
2
0
0
1
2
3
4 nC 5.5
QGate
10 -1
10 -2
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
Page 6
2004-03-01
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