SPU01N60C3 データシートの表示（PDF） - Infineon Technologies

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SPU01N60C3

Cool MOS™ Power Transistor

Infineon Technologies 

SPU01N60C3

SPD01N60C3

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min. typ. max.

Transconductance

gfs

VDS≥2*ID*RDS(on)max,

- 0.75 - S

ID=0.5A

Input capacitance

Ciss

VGS=0V, VDS=25V,

-

Output capacitance

Coss

f=1MHz

-

Reverse transfer capacitance Crss

-

Turn-on delay time

td(on)

VDD=350V, VGS=0/10V,

-

Rise time

tr

ID=0.8A, RG=100Ω

-

Turn-off delay time

td(off)

-

100 - pF

40

-

2.5

-

30

- ns

25

-

55 82

Fall time

tf

-

30 45

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Qgs

Qgd

VDD=350V, ID=0.8A

Gate charge total

Qg

VDD=350V, ID=0.8A,

VGS=0 to 10V

Gate plateau voltage

V(plateau) VDD=350V, ID=0.8A

-

0.9

- nC

-

2.2

-

-

3.9

5

-

5.5

-V

1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.

2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

3ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.

Identical low-side and high-side switch.

Rev. 2.5

Page 3

2008-04-07

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