SPU30N03 データシートの表示（PDF） - Infineon Technologies

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SPU30N03

SIPMOS® Power Transistor

Infineon Technologies 

SIPMOS® Power Transistor

Features

• N channel

• Enhancement mode

• Avalanche rated

Product Summary

Drain source voltage

Drain-Source on-state resistance

Continuous drain current

• dv/dt rated

• 175˚C operating temperature

SPD 30N03

VDS

30 V

RDS(on) 0.015 Ω

ID

30 A

Type

SPD30N03

SPU30N03

Package Ordering Code Packaging

P-TO252 Q67040-S4144-A2 Tape and Reel

P-TO251-3-1 Q67040-S4146-A2 Tube

Pin 1 Pin 2 Pin 3

G

D

S

Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

TC = 25 ˚C, 1)

TC = 100 ˚C

Pulsed drain current

TC = 25 ˚C

Avalanche energy, single pulse

ID = 30 A, VDD = 25 V, RGS = 25 Ω

IDpulse

EAS

Avalanche energy, periodic limited by Tjmax

Reverse diode dv/dt

EAR

dv/dt

IS = 30 A, VDS = 24 V, di/dt = 200 A/µs,

Tjmax = 175 ˚C

Gate source voltage

Power dissipation

TC = 25 ˚C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

VGS

Ptot

Tj , Tstg

Value

30

30

120

250

12

6

±20

120

-55... +175

55/175/56

Unit

A

mJ

kV/µs

V

W

˚C

Data Sheet

1

05.99

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