SSF3606 データシートの表示（PDF） - Silikron Semiconductor Co.,LTD.
部品番号
コンポーネント説明
メーカー
SSF3606 Datasheet PDF : 7 Pages
| |||
SSF3606
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
1
μA
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
1.3 1.7
2.5
V
VGS=4.5V, ID=11.5A
6.4
8.5
mΩ
VGS=10V, ID=15A
4.8
6
mΩ
VDS=5V,ID=11A
25
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
3100
PF
Coss
VDS=15V,VGS=0V,
F=1.0MHz
550
PF
Crss
300
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
t d(on)
19
nS
tr
VDS=15V,VGS=10V,RGEN=6Ω
11
nS
td(off)
ID=1A
60
nS
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
tf
25
nS
Qg
50
nC
Qgs
VDS=15V,ID=15A,VGS=10V
8
nC
Gate-Drain Charge
Qgd
15
nC
Body Diode Reverse Recovery Time
T rr
20
nS
IF=15A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Q rr
5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=2.8A
0.75 1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2
http://www.silikron.com
v1.1
Share Link: 