SSR1010DZ データシートの表示（PDF） - Solid State Devices, Inc.
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SSR1010DZ Datasheet PDF : 2 Pages
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
• PIV: 100 Volts
• Low Reverse Leakage Current
• Low Forward Voltage Drop
• Guard Ring for Overvoltage Protection
• Isolated Hermetically Sealed Package
• Available in Glass or Ceramic Seal Packages
• Custom Lead Forming Available
• Eutectic Die Attach
• 175°C Operating Junction Temperature
• TX, TXV, and Space Level Screening Available
SSR2008CTM, SSR2008CTZ
SSR2009CTM, SSR2009CTZ
SSR2010CTM, SSR2010CTZ
20 AMPS
100 VOLTS
CENTER TAP
SCHOTTKY RECTIFIER
TO-254
TO-254Z
Available in Given Voltage (2008, 2009, 2010) in the Following Configurations:
TO-254: SSR2010CTM, SSR2010CTMUB, SSR2010CTMDB, SSR2010CAM, SSR2010CAMUB, SSR2010CAMDB
SSR1010DM, SSR1010DMUB, SSR1010DMDB
TO-254Z: SSR2010CTZ, SSR2010CTZUB, SSR2010CTZDB, SSR2010CAZ, SSR2010CAZUB, SSR2010CAZDB
SSR1010DZ, SSR1010DZUB, SSR1010DZDB
MAXIMUM RATINGS 1/
Symbol Value
Unit
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
Average Rectified Forward Current 3/ 4/
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)
Peak Surge Current 3/ 4/
(8.3 ms Pulse, Half Sine Wave, TA = 25°C)
SSR2008CTM & CTZ
SSR2090CTM & CTZ
SSR2010CTM & CTZ
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to Case 3/
Junction to Case 2/
VRRM
VRWM
VR
IO
IFSM
TOP & Tstg
RθJC
80
90
100
20
300
-65 to +175
1.0
1.7
Volts
Amps
Amps
°C
°C/W
NOTE:
1/ All Electrical Characteristics @25°C, Unless Otherwise Specified.
2/ Per Leg.
3/ Pins 1 and 3 Connected Together.
4/ Doubler: IO = 10A, IFSM = 200A.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0075F
DOC
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