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SST25VF016B データシートの表示(PDF) - Silicon Storage Technology

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SST25VF016B
SST
Silicon Storage Technology SST
SST25VF016B Datasheet PDF : 28 Pages
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16 Mbit SPI Serial Flash
SST25VF016B
Read (25 MHz)
The Read instruction, 03H, supports up to 25 MHz Read.
The device outputs the data starting from the specified
address location. The data output stream is continuous
through all addresses until terminated by a low to high tran-
sition on CE#. The internal address pointer will automati-
cally increment until the highest memory address is
reached. Once the highest memory address is reached,
the address pointer will automatically increment to the
Data Sheet
beginning (wrap-around) of the address space. Once the
data from address location 1FFFFFH has been read, the
next output will be from address location 000000H.
The Read instruction is initiated by executing an 8-bit com-
mand, 03H, followed by address bits [A23-A0]. CE# must
remain active low for the duration of the Read cycle. See
Figure 5 for the Read sequence.
CE#
MODE 3
SCK MODE 0
0 1 2345 6 78
15 16
23 24 31 32 39 40 47 48 55 56 63 64 70
SI
03
ADD. ADD. ADD.
MSB
MSB
HIGH IMPEDANCE
SO
N
DOUT
N+1
DOUT
N+2
DOUT
N+3
DOUT
N+4
DOUT
MSB
1271 ReadSeq.0
FIGURE 5: Read Sequence
©2008 Silicon Storage Technology, Inc.
9
S71271-03-000
9/08

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