SST29SF010 データシートの表示（PDF） - Silicon Storage Technology
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SST29SF010 Datasheet PDF : 24 Pages
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AC CHARACTERISTICS
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash
SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040
SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
TABLE 10: READ CYCLE TIMING PARAMETERS
VDD = 5V±10% FOR SST29SFXXX AND 2.7-3.6V FOR SST29VFXXX
SST29SF/VFxxx-55
SST29SF/VFxxx-70
Symbol Parameter
Min
Max
Min
Max
Units
TRC
TCE
TAA
TOE
TCLZ1
TOLZ1
TCHZ1
TOHZ1
TOH1
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
55
70
55
70
55
70
30
35
0
0
0
0
20
25
20
25
0
0
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
ns
ns
ns
ns
ns
ns
ns
ns
ns
T10.5 505
TABLE 11: PROGRAM/ERASE CYCLE TIMING PARAMETERS
VDD = 5V±10%V FOR SST29SFXXX AND 2.7-3.6V FOR SST29VFXXX
Symbol Parameter
Min
Max
Units
TBP
Byte-Program Time
20
µs
TAS
Address Setup Time
0
ns
TAH
Address Hold Time
30
ns
TCS
WE# and CE# Setup Time
0
ns
TCH
WE# and CE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
10
ns
TCP
CE# Pulse Width
40
ns
TWP
WE# Pulse Width
40
ns
TWPH1 WE# Pulse Width High
30
ns
TCPH1 CE# Pulse Width High
30
ns
TDS
Data Setup Time
40
ns
TDH1
Data Hold Time
0
ns
TIDA1
Software ID Access and Exit Time
150
ns
TSE
Sector-Erase
25
ms
TSCE
Chip-Erase
100
ms
T11.6 505
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
10
S71160-05-000 5/01 505
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