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SST29SF010 データシートの表示(PDF) - Silicon Storage Technology

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SST29SF010 Datasheet PDF : 24 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash
SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040
SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
TABLE 2: PIN DESCRIPTION
Symbol
AMS1-A0
Pin Name
Address Inputs
Functions
To provide memory addresses. During Sector-Erase AMS-A8 address lines will select the
sector.
DQ7-DQ0
Data Input/output
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
CE#
Chip Enable
To activate the device when CE# is low.
OE#
Output Enable
To gate the data output buffers.
WE#
Write Enable
To control the Write operations.
VDD
Power Supply
To provide power supply voltage: 4.5-5.5V for SST29SF512/010/020/040
2.7-3.6V for SST29VF512/010/020/040
VSS
Ground
NC
No Connection
Pin not connected internally
1. AMS = Most significant address
AMS = A15 for SST29SF/VF512, A16 for SST29SF/VF010, A17 for SST29SF/VF020, and A18 for SST29SF/VF040
T2.3 505
TABLE 3: OPERATION MODES SELECTION
Mode
Read
Program
Erase
CE#
VIL
VIL
VIL
OE#
VIL
VIH
VIH
WE#
VIH
VIL
VIL
DQ
DOUT
DIN
X1
Standby
Write Inhibit
Product Identification
Software Mode
VIH
X
X
VIL
X
X
VIL VIL
1. X can be VIL or VIH, but no other value.
X High Z
X High Z/ DOUT
VIH High Z/ DOUT
VIH
Address
AIN
AIN
Sector address,
XXH for Chip-Erase
X
X
X
See Table 4
T3.4 505
©2001 Silicon Storage Technology, Inc.
6
S71160-05-000 5/01 505

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