SST34HF1681 データシートの表示（PDF） - Silicon Storage Technology
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SST34HF1681 Datasheet PDF : 30 Pages
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16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory
SST34HF1681
Advance Specifications
TABLE 8: DC OPERATING CHARACTERISTICS (VDD = VDDF AND VDDS = 2.7-3.3V)
Limits
Symbol Parameter
Min Max Units Test Conditions
IDD
Active VDD Current
ISB
IRT
ILI
ILO
VIL
VILC
VIH
VIHC
VOLF
VOHF
VOLS
VOHS
Read
Flash
SRAM
Concurrent Operation
Write1
Flash
SRAM
Standby VDD Current 3.0V
3.3V
Reset VDD Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input Low Voltage (CMOS)
Input High Voltage
Input High Voltage (CMOS)
Flash Output Low Voltage
Flash Output High Voltage
SRAM Output Low Voltage
SRAM Output High Voltage
35
30
60
40
30
40
75
30
1
1
0.8
0.3
0.7 VDD
VDD-0.3
0.2
VDD-0.2
0.4
2.2
1. IDD active while Erase or Program is in progress.
Address input = VIL/VIH, at f=1/TRC Min,
VDD=VDD Max, all DQs open
OE#=VIL, WE#=VIH
mA BEF#=VIL, BES1#=VIH, or BES2=VIL
mA BEF#=VIH, BES1#=VIL , BES2=VIH
mA BEF#=VIH, BES1#=VIL , BES2=VIH
WE#=VIL
mA BEF#=VIL, BES1#=VIH, or BES2=VIL, OE#=VIH
mA BEF#=VIH, BES1#=VIL , BES2=VIH
µA VDD = VDD Max, BEF#=BES1#=VIHC, BES2=VILC
µA
µA Reset=VSS±0.3V
µA VIN=GND to VDD, VDD=VDD Max
µA VOUT=GND to VDD, VDD=VDD Max
V VDD=VDD Min
V VDD=VDD Max
V VDD=VDD Max
V VDD=VDD Max
V IOL=100 µA, VDD=VDD Min
V IOH=-100 µA, VDD=VDD Min
V IOL =1 mA, VDD=VDD Min
V IOH =-500 µA, VDD=VDD Min
T8.1 561
©2001 Silicon Storage Technology, Inc.
12
S71214-00-000 12/01 561
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