SST36VF1601 データシートの表示（PDF） - Silicon Storage Technology

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SST36VF1601

16 Megabit Concurrent SuperFlash

Silicon Storage Technology 

16 Megabit Concurrent SuperFlash

SST36VF1601 / SST36VF1602

Advance Information

FEATURES:

• Organized as 1M x16

• Read Access Time

1

• Dual-Bank Architecture for Concurrent

– 70 and 90 ns

Read/Write Operation

• Latched Address and Data

2

– 16 Mbit Bottom Sector Protection

• Fast Erase and Word-Program:

- SST36VF1601: 12 Mbit + 4 Mbit

– 16 Mbit Top Sector Protection

- SST36VF1602: 4 Mbit + 12 Mbit

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

3

– Chip-Erase Time: 70 ms (typical)

• Single 2.7-3.6V Read and Write Operations

– Word-Program Time: 14 µs (typical)

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Chip Rewrite Time: 8 seconds (typical)

4

• Automatic Write Timing

– Greater than 100 years Data Retention

– Internal VPP Generation

• Low Power Consumption:

• End-of-Write Detection

5

– Active Current: 25 mA (typical)

– Toggle Bit

– Standby Current: 4 µA (typical)

– Data# Polling

– Auto Low Power Mode: 4 µA (typical)

– Ready/Busy# pin

6

• Hardware Sector Protection/WP# Input Pin

• CMOS I/O Compatibility

– Protects 4 outer most sectors (4 KWord) in the

larger bank by driving WP# low and unprotects

• Conforms to Common Flash Memory

Interface (CFI)

7

by driving WP# high

• Hardware Reset Pin (RESET#)

• JEDEC Standards

– Resets the internal state machine to reading

– Flash EEPROM Pinouts and command sets

8

data array

• Packages Available

• Sector-Erase Capability

– Uniform 1 KWord sectors

– 48-Pin TSOP (12mm x 20mm)

– 48-Ball TFBGA (8mm x 10mm)

9

• Block-Erase Capability

– Uniform 32 KWord blocks

10

PRODUCT DESCRIPTION

The SST36VF1601/1602 are suited for applications that

The SST36VF1601/1602 are 1M x16 CMOS Concurrent require convenient and economical updating of program,

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Read/Write Flash Memory manufactured with SST’s pro- configuration, or data memory. For all system applica-

prietary, high performance CMOS SuperFlash technol- tions, the SST36VF1601/1602 significantly improve per-

ogy. The split-gate cell design and thick oxide tunneling formance and reliability, while lowering power consump-

12

injector attain better reliability and manufacturability com- tion. The SST36VF1601/1602 inherently use less energy

pared with alternate approaches.The SST36VF1601/ during Erase and Program than alternative flash technolo-

1602 write (Program or Erase) with a 2.7-3.6V power gies. The total energy consumed is a function of the 13

supply. The SST36VF1601/1602 devices conform to applied voltage, current, and time of application. Since for

JEDEC standard pinouts for x16 memories.

any given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time, the

Featuring high performance Word-Program, the total energy consumed during any Erase or Program

14

SST36VF1601/1602 devices provide a typical Word-Pro- operation is less than alternative flash technologies. The

gram time of 14 µsec. The devices use Toggle Bit or Data# SST36VF1601/1602 also improve flexibility while lower-

Polling to detect the completion of the Program or Erase ing the cost for program, data, and configuration storage

15

operation. To protect against inadvertent write, the applications.

SST36VF1601/1602 devices have on-chip hardware and

Software Data Protection schemes. Designed, manufac- The SuperFlash technology provides fixed Erase and 16

tured, and tested for a wide spectrum of applications, the Program times, independent of the number of Erase/

SST36VF1601/1602 devices are offered with a guaran- Program cycles that have occurred. Therefore the sys-

teed endurance of 10,000 cycles. Data retention is rated tem software or hardware does not have to be modified or

at greater than 100 years.

de-rated as is necessary with alternative flash technolo-

© 2000 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. Concurrent SuperFlash is a trademark of Silicon Storage Technology, Inc.

373-3 11/00

S71142

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These specifications are subject to change without notice.

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