SST36VF1601E データシートの表示（PDF） - Silicon Storage Technology

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SST36VF1601E

16 Mbit (x8/x16) Concurrent SuperFlash

Silicon Storage Technology 

16 Mbit Concurrent SuperFlash

SST36VF1601E / SST36VF1602E

Data Sheet

TABLE 6: CFI QUERY IDENTIFICATION STRING1

Address

x16 Mode

10H

11H

12H

13H

14H

15H

16H

17H

18H

19H

1AH

Address

x8 Mode

20H

22H

24H

26H

28H

2AH

2CH

2EH

30H

32H

34H

Data2

0051H

0052H

0059H

0001H

0007H

0000H

0000H

0000H

0000H

0000H

0000H

Description

Query Unique ASCII string “QRY”

Primary OEM command set

Address for Primary Extended Table

Alternate OEM command set (00H = none exists)

Address for Alternate OEM extended Table (00H = none exits)

1. Refer to CFI publication 100 for more details.

2. In x8 mode, only the lower byte of data is output.

T6.0 1274

TABLE 7: SYSTEM INTERFACE INFORMATION

Address Address

x16 Mode x8 Mode

Data1 Description

1BH

36H

0027H VDD Min (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1CH

1DH

38H

3AH

0036H

0000H

VDD Max (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

VPP min (00H = no VPP pin)

1EH

3CH

0000H VPP max (00H = no VPP pin)

1FH

3EH

0004H Typical time out for Program 2N µs (24 = 16 µs)

20H

40H

0000H Typical time out for min size buffer program 2N µs (00H = not supported)

21H

42H

0004H Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms)

22H

44H

0006H Typical time out for Chip-Erase 2N ms (26 = 64 ms)

23H

46H

0001H Maximum time out for Program 2N times typical (21 x 24 = 32 µs)

24H

48H

0000H Maximum time out for buffer program 2N times typical

25H

4AH

0001H Maximum time out for individual Sector-/Block-Erase 2N times typical (21 x 24 = 32 ms)

26H

4CH

0001H Maximum time out for Chip-Erase 2N times typical (21 x 26 = 128 ms)

1. In x8 mode, only the lower byte of data is output.

T7.0 1274

©2005 Silicon Storage Technology, Inc.

14

S71274-03-000

11/05

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