SST36VF1601E データシートの表示（PDF） - Silicon Storage Technology

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SST36VF1601E

16 Mbit (x8/x16) Concurrent SuperFlash

Silicon Storage Technology 

16 Mbit Concurrent SuperFlash

SST36VF1601E / SST36VF1602E

TABLE 9: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V

Limits

Symbol

IDD1

Parameter

Active VDD Current

Read

Freq Min

Max

5 MHz

15

1 MHz

4

Program and Erase

30

Concurrent Read/Write

5 MHz

45

1 MHz

35

ISB

Standby VDD Current

20

IALP

Auto Low Power VDD Current

20

IRT

ILI

ILIW

ILO

VIL

VILC

VIH

VIHC

VOL

VOH

Reset VDD Current

Input Leakage Current

Input Leakage Current

on WP# pin and RST# pin

Output Leakage Current

Input Low Voltage

Input Low Voltage (CMOS)

Input High Voltage

Input High Voltage (CMOS)

Output Low Voltage

Output High Voltage

20

1

10

0.7 VDD

VDD-0.3

VDD-0.2

1

0.8

0.3

VDD+0.3

VDD+0.3

0.2

1. Address input = VILT/VIHT, VDD=VDD Max (See Figure 21)

Units

mA

mA

mA

mA

mA

µA

µA

µA

µA

µA

µA

V

V

V

V

V

V

Data Sheet

Test Conditions

CE#=VIL, WE#=OE#=VIH

CE#=WE#=VIL, OE#=VIH

CE#=VIL, OE#=VIH

CE#, RST#=VDD±0.3V

CE#=0.1V, VDD=VDD Max

WE#=VDD-0.1V

Address inputs=0.1V or VDD-0.1V

RST#=GND

VIN =GND to VDD, VDD=VDD Max

WP#=GND to VDD, VDD=VDD Max

RST#=GND to VDD, VDD=VDD Max

VOUT =GND to VDD, VDD=VDD Max

VDD=VDD Min

VDD=VDD Max

VDD=VDD Max

VDD=VDD Max

IOL=100 µA, VDD=VDD Min

IOH=-100 µA, VDD=VDD Min

T9.1 1274

TABLE 10: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

Minimum

Units

TPU-READ1

TPU-WRITE1

Power-up to Read Operation

Power-up to Write Operation

100

µs

100

µs

T10.0 1274

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 11: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

CIN1

I/O Pin Capacitance

Input Capacitance

VI/O = 0V

VIN = 0V

10 pF

10 pF

T11.0 1274

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 12: RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification

Units Test Method

NEND1

Endurance

10,000

Cycles JEDEC Standard A117

TDR1

ILTH1

Data Retention

Latch Up

100

100 + IDD

Years JEDEC Standard A103

mA JEDEC Standard 78

T12.0 1274

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

©2005 Silicon Storage Technology, Inc.

17

S71274-03-000

11/05

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