SST36VF1601G データシートの表示（PDF） - Silicon Storage Technology

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SST36VF1601G

16 Mbit (x8/x16) Concurrent SuperFlash

Silicon Storage Technology 

16 Mbit Concurrent SuperFlash

SST36VF1601G / SST36VF1602G

ADDRESSES

CE#

SIX-BYTE CODE FOR CHIP-ERASE

555

2AA

555

555

2AA

BAX

Data Sheet

TBE

OE#

WE#

RY/BY#

TWP

TBY

TBR

DQ15-0

XXAA XX55

XX80 XXAA XX55

XX50

VALID

1342 F11.1

Note: This device also supports CE# controlled Block-Erase operation. The WE# and CE# signals are interchangeable

as long as minimum timings are met. See Table 15 on page 19.

BAx = Block Address

X can be VL or VIH, but not other value.

FIGURE 15: WE# Controlled Block-Erase Timing Diagram

SIX-BYTE CODE FOR CHIP-ERASE

TSE

ADDRESSES

555

2AA

555

555

2AA

SAX

CE#

OE#

WE#

RY/BY#

TWP

TBY

TBR

DQ15-0

XXAA XX55

XX80 XXAA XX55

XX30

VALID

Note: This device also supports CD# controlled Sector-Erase operation. The WE# and CE# signals are inter-

changeable as long as minimum timings are met. See Table 15 on page 19.

BAx = Block Address

X can be VL or VIH, but no other value.

1342 F12.1

FIGURE 16: WE# Controlled Sector-Erase Timing Diagram

©2006 Silicon Storage Technology, Inc.

23

S71342-00-000

12/06

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