SST39SF512 データシートの表示（PDF） - Silicon Storage Technology
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SST39SF512 Datasheet PDF : 22 Pages
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512 Kbit / 1 Mbit Multi-Purpose Flash
SST39SF512 / SST39SF010
Data Sheet
AC CHARACTERISTICS
TABLE 9: READ CYCLE TIMING PARAMETERS VDD = 5.0V±10%
SST39SF512/010-70
SST39SF512/010-90
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
70
90
TCE
Chip Enable Access Time
70
90
TAA
Address Access Time
70
90
TOE
Output Enable Access Time
35
45
TCLZ1
CE# Low to Active Output
0
0
TOLZ1
OE# Low to Active Output
0
0
TCHZ1
CE# High to High-Z Output
25
30
TOHZ1
OE# High to High-Z Output
25
30
TOH1
Output Hold from Address Change
0
0
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
ns
ns
ns
ns
ns
ns
ns
ns
ns
T9.2 394
TABLE 10: PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol Parameter
Min
Max
Units
TBP
Byte-Program Time
20
µs
TAS
Address Setup Time
0
ns
TAH
Address Hold Time
30
ns
TCS
WE# and CE# Setup Time
0
ns
TCH
WE# and CE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
10
ns
TCP
CE# Pulse Width
40
ns
TWP
TWPH1
TCPH1
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
40
ns
30
ns
30
ns
TDS
TDH1
TIDA1
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
30
ns
0
ns
150
ns
TSE
Sector-Erase
10
ms
TSCE
Chip-Erase
20
ms
T10.0 394
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
9
S71149-03-000 4/01 394
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