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SST39SF010A-45-4C-U1 データシートの表示(PDF) - Silicon Storage Technology

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SST39SF010A-45-4C-U1
SST
Silicon Storage Technology SST
SST39SF010A-45-4C-U1 Datasheet PDF : 22 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
Preliminary Specification
TABLE 5: DC OPERATING CHARACTERISTICS VDD = 5.0V±10%
Limits
Symbol Parameter
Min Max Units
IDD
Power Supply Current
ISB1
ISB2
ILI
ILO
VIL
VIH
VIHC
VOL
VOH
Read
Write
Standby VDD Current
(TTL input)
Standby VDD Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
25 mA
25 mA
3 mA
100 µA
1
µA
10 µA
0.8 V
2.0
V
VDD-0.3
V
0.4 V
2.4
V
Test Conditions
Address input=VIL/VIH, at f=1/TRC Min
VDD=VDD Max
CE#=OE#=VIL, WE#=VIH, all I/Os open
CE#=WE#=VIL, OE#=VIH
CE#=VIH, VDD=VDD Max
CE#=VIHC, VDD=VDD Max
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VDD=VDD Max
VDD=VDD Max
IOL=2.1 mA, VDD=VDD Min
IOH=-400 µA, VDD=VDD Min
T5.4 398
TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
TPU-READ1
Power-up to Read Operation
100
µs
TPU-WRITE1
Power-up to Program/Erase Operation
100
µs
T6.1 398
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
CIN1
I/O Pin Capacitance
Input Capacitance
VI/O = 0V
VIN = 0V
12 pF
6 pF
T7.0 398
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: RELIABILITY CHARACTERISTICS
Symbol
Parameter
Minimum Specification
Units Test Method
NEND1
Endurance
10,000
Cycles JEDEC Standard A117
TDR1
Data Retention
100
Years JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA JEDEC Standard 78
T8.1 398
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
8
S71147-02-000 5/01 398

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