SST39VF800Q-90-4C-U1 データシートの表示（PDF） - Silicon Storage Technology
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SST39VF800Q-90-4C-U1 Datasheet PDF : 23 Pages
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AC CHARACTERISTICS
8 Megabit Multi-Purpose Flash
SST39VF800Q / SST39VF800
Advance Information
TABLE 12: SST39VF800Q/VF800 READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V
SST39VF800Q/VF800-70 SST39VF800Q/VF800-90
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle time
70
TCE
Chip Enable Access Time
70
TAA
Address Access Time
70
TOE
Output Enable Access Time
30
TCLZ(1) CE# Low to Active Output
0
TOLZ(1) OE# Low to Active Output
0
TCHZ(1) CE# High to High-Z Output
20
TOHZ(1) OE# High to High-Z Output
20
TOH(1)
Output Hold from Address Change
0
90
ns
90
ns
90
ns
40
ns
0
ns
0
ns
30
ns
30
ns
0
ns
343 PGM T13.0
TABLE 13: PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol Parameter
Min
Max
Units
TBP
Word Program time
TAS
Address Setup Time
0
TAH
Address Hold Time
30
TCS
WE# and CE# Setup Time
0
TCH
WE# and CE# Hold Time
0
TOES
OE# High Setup Time
0
TOEH
OE# High Hold Time
10
TCP
CE# Pulse Width
40
TWP
WE# Pulse Width
40
TWPH (1)
WE# Pulse Width High
30
TCPH (1)
CE# Pulse Width High
30
TDS
Data Setup Time
30
TDH (1)
Data Hold Time
0
TIDA (1)
Software ID Access and Exit Time
TSE
Sector Erase
TBE
Block Erase
TSCE
Chip Erase
20
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
150
ns
25
ms
25
ms
100
ms
343 PGM T14.1
Note 1: This parameter is measured only for initial qualification and after the design or process change that could affect this parameter.
© 1999 Silicon Storage Technology, Inc.
10
343-04 2/99
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