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ST230S データシートの表示(PDF) - International Rectifier

部品番号
コンポーネント説明
メーカー
ST230S
IR
International Rectifier IR
ST230S Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
ST2P3r0eSvioSuesrieDsatasheet
Index
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
04
08
ST230S
12
14
16
VDRM/VRRM, max. repetitive
peak and off-state voltage
V
400
800
1200
1400
1600
VRSM , maximum non-
repetitive peak voltage
V
500
900
1300
1500
1700
IDRM/IRRM max.
@ TJ = TJ max
mA
30
On-state Conduction
Parameter
IT(AV) Max. average on-state current
@ Case temperature
IT(RMS) Max. RMS on-state current
ITSM Max. peak, one-cycle
non-repetitive surge current
I2t
Maximum I2t for fusing
I2t Maximum I2t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1
Low level value of on-state
slope resistance
rt2
High level value of on-state
slope resistance
VTM Max. on-state voltage
IH
Maximum holding current
IL
Max. (typical) latching current
ST230S
230
85
360
5700
5970
4800
5000
163
148
115
105
1630
0.92
0.98
Units Conditions
A 180° conduction, half sine wave
°C
12
A DC @ 78°C case temperature
t = 10ms No voltage
t = 8.3ms reapplied
A
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
KA2s
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% VRRM
reapplied
Initial TJ = TJ max.
KA2s t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
(I > π x IT(AV)),TJ = TJ max.
0.88
0.81
1.55
600
1000 (300)
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
m
(I > π x IT(AV)),TJ = TJ max.
2222222222222
V
Ipk= 720A, TJ = TJ max, tp = 10ms sine pulse
mA TJ = 25°C, anode supply 12V resistive load
Switching
Parameter
di/dt Max. non-repetitive rate of rise
of turned-on current
ST230S
1000
td
Typical delay time
1.0
tq
Typical turn-off time
100
To Order
Units Conditions
A/µs
µs
Gate drive 20V, 20, tr 1µs
TJ = TJ max, anode voltage 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs

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