ST2301SRG データシートの表示（PDF） - STANSON TECHNOLOGY
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ST2301SRG Datasheet PDF : 6 Pages
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ST2301A
P Channel Enhancement Mode MOSFET
-3.0A
DESCRIPTION
ST2301A is the P-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology.This high density process is
especially tailored to minimize on-state resistance.These devices are particularly suited for
low voltage application such as cellular phone and notebook computer power management,
other battery powered circuits, and low in-line power loss are required. The product is in
a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
FEATURE
z -20V/-2.8A, RDS(ON) = 80mΩ (Typ.)
@VGS = -4.5V
z -20V/-2.0A, RDS(ON) = 120mΩ
@VGS = -2.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23 package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
3
S01YA
1
2
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
ST2301SRG
SOT-23
※ Process Code ∶ A ~ Z ; a ~ z
※ ST2301SRG ∶ S : SOT23 R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Part Marking
S01YA
ST2301A 2005. V1
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