ST2303 データシートの表示（PDF） - STANSON TECHNOLOGY

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ST2303

P Channel Enchancement Mode MOSFET

STANSON TECHNOLOGY 

P Channel Enchancement Mode MOSFET

-1.7A

ST2303

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-10uA -30

V

Gate Threshold Voltage

VGS(th) VDS=VGS,ID=-250uA -1.0

-3.0 V

Gate Leakage Current

IGSS VDS=0V,VGS=+20V

+100 nA

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-source On-Resistance

Forward Transconductance

Diode Forward Voltage

VDS=-30V,VGS=0V

IDSS VDS=-30V,VGS=0V

TJ=55℃

ID(on) VDS≦-5V,VGS=-10V -6

-1

-10 uA

A

RDS(on) VGS=-10V,ID=-2.6A

VGS=-4.5V,ID=-2.0A

gfs VDS=-10V,ID=-1.7V

0.095 0.130 Ω

0.125 0.180

2.4

S

VSD IS=-1.25A,VGS=0V

-0.8 -1.2 V

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Time

Turn-Off Time

Qg

Qgs

Qgd

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS=-15V,VGS=-10V

ID≡-1.7A

VDS=-15V,VGS=0V

F=1MHz

VDD=-15V,RL=15Ω

ID=-1.0A,VGEN=-10V

RG=6Ω

5.8 10

0.8

nC

1.5

226

87

PF

19

9 20

9 20 nS

18 35

6 20

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