ST3414 データシートの表示（PDF） - STANSON TECHNOLOGY
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ST3414 Datasheet PDF : 6 Pages
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ST3414
N Channel Enhancement Mode MOSFET
4.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS=0V,ID=-250uA 20
V
VDS=VGS,ID=250uA 0.40
1.0 V
VDS=0V,VGS=±12V
VDS=20V,VGS=0V
VDS=20V,VGS=0V
TJ=55℃
VDS≧5V,VGS=4.5V
VGS=4.5V,ID=4.2A
VGS=2.5V,ID=3.4A
VGS=1.8V,ID=2.8A
VDS=5V,ID=3.6V
±100 nA
1
5 uA
6
A
0.040
0.055
Ω
0.075
10
S
IS=1.6A,VGS=0V
0.8 1.2 V
VDS=10V
VGS=4.5V
ID=2.8A
VDS=6V
VGS=0V
f=1MHz
VDD=6V
RL=6Ω
ID=1.0A
VGEN=4.5V
RG=6Ω
4.8 8
1.0
nC
1.0
485
85
pF
40
8 14
12 18
nS
30 35
12 16
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3414 2006. V1
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