STB75NF75L データシートの表示（PDF） - STMicroelectronics

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STB75NF75L

N-channel 75V - 0.009Ω - 75A - D2PAK STripFET™ II Power MOSFET

STMicroelectronics 

STB75NF75L

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage (VGS = 0)

VGS

ID (1)

Gate-source voltage

Drain current (continuous) at TC = 25°C

ID

IDM(2)

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

PTOT Total dissipation at TC = 25°C

Derating factor

dv/dt (3) Peak diode recovery voltage slope

EAS (4) Single pulse avalanche energy

TJ

Operating junction temperature

Tstg

Storage temperature

1. Current limited by package

2. Pulse width limited by safe operating area

3. ISD ≤75A, di/dt ≤500A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

4. Starting TJ = 25 oC, ID = 37.5A, VDD = 30V

Table 3. Thermal data

Symbol

Parameter

RthJC

RthJA

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering

purpose

Electrical ratings

Value

75

± 15

75

70

300

300

2

10

680

-55 to 175

Unit

V

V

A

A

A

W

W/°C

V/ns

mJ

°C

Value

0.5

62.5

300

Unit

°C/W

°C/W

°C

3/13

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