STB75NF75L データシートの表示（PDF） - STMicroelectronics

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STB75NF75L

N-channel 75V - 0.009Ω - 75A - D2PAK STripFET™ II Power MOSFET

STMicroelectronics 

STB75NF75L

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 75A, VGS = 0

ISD = 75A,

di/dt = 100A/µs,

VDD = 24V, TJ = 150°C

see Figure 16

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

75 A

300 A

1.3 V

120

ns

500

nC

9

A

5/13

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