STB80NF55-08T4 データシートの表示（PDF） - STMicroelectronics

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STB80NF55-08T4

N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D2PAK, TO-247 STripFET™ Power MOSFET

STMicroelectronics 

STB80NF55-08T4, STP80NF55-08, STW80NF55-08

Electrical characteristics

Table 8. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD

trr(2)

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 80 A, VGS = 0

ISD = 80 A,VDD = 25 V

di/dt=100 A/µs,

Tj =150 °C

(see Figure 18)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min Typ. Max Unit

80 A

320 A

1.5 V

80

ns

230

nC

5.7

A

Doc ID 14511 Rev 2

5/15

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