STI17NF25 データシートの表示（PDF） - STMicroelectronics

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STI17NF25

N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STI17NF25 - STD17NF25 - STF17NF25 - STP17NF25

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM(2)

PTOT

dv/dt(3)

Drain-source voltage (VGS = 0)

Gate-source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

Peak diode recovery voltage slope

TJ

Operating junction temperature

Tstg

Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤17A, di/dt ≤200A/µs, VDD < 80%V(BR)DSS

Value

TO-220

DPAK/I²PAK

TO-220FP

250

±20

17

10

68

90

0.72

10

17(1)

10(1)

68(1)

25

0.2

Unit

V

V

A

A

A

W

W/°C

V/ns

-55 to 150

°C

Table 2. Thermal data

Symbol

Parameter

Rthj-case

Rthj-amb

Tl

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Maximum lead temperature for soldering

purpose

1. When mounted on 1inch² FR-4, 2 Oz copper board

TO-220

I²PAK

DPAK

1.38

62.5

50 (1)

300

TO-220FP Unit

5

°C/W

62.5 °C/W

°C

Table 3. Avalanche data

Symbol

Parameter

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID=IAR, VDD=50V)

Value

Unit

17

A

100

mJ

3/17

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