STI17NF25 データシートの表示（PDF） - STMicroelectronics

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STI17NF25

N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

STI17NF25 - STD17NF25 - STF17NF25 - STP17NF25

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

V(BR)DSS

Drain-source breakdown

voltage

IDSS

Zero gate voltage drain

current (VGS = 0)

IGSS

Gate body leakage current

(VDS = 0)

VGS(th) Gate threshold voltage

RDS(on)

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 1mA, VGS= 0

250

VDS = Max rating,

VDS = Max rating,Tc=125°C

V

1 µA

10 µA

VGS = ±20V

±100 nA

VDS= VGS, ID = 250µA

VGS= 10V, ID= 8.5A

2

3

4

V

0.14 0.165 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS = 15V, ID = 8.5A

14

S

Ciss Input capacitance

1000

pF

Coss

Crss

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

178

28

pF

pF

Coss eq

Equivalent output

capacitance

VGS=0, VDS =0V to 200V

135

pF

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=200V, ID = 17A

VGS =10V

(see Figure 16)

29.5

nC

4.8

nC

15.6

nC

f=1MHz gate DC bias=0 test

RG Gate input resistance

signal level=20mV open

2

Ω

drain

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

4/17

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