STI17NF25 データシートの表示（PDF） - STMicroelectronics

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STI17NF25

N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STI17NF25 - STD17NF25 - STF17NF25 - STP17NF25

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

Turn-off delay time

Fall time

Test conditions

VDD=125V, ID=8.5A,

RG=4.7Ω, VGS=10V

(see Figure 15)

VDD=125V, ID=8.5A,

RG=4.7Ω, VGS=10V

(see Figure 15)

Min. Typ. Max. Unit

8.8

ns

17.2

ns

21

ns

8.8

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

Source-drain current

Source-drain current

(pulsed)

VSD(2) Forward on voltage

ISD=17A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17A, di/dt = 100A/µs,

VDD = 50 V, Tj = 25°C

(see Figure 17)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17A, di/dt = 100A/µs,

VDD = 50 V, Tj=150°C

(see Figure 17)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

17 A

68 A

1.6 V

157

ns

0.91

µC

11.6

A

196

ns

1.34

µC

13.7

A

5/17

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