Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
STG3680 データシートの表示(PDF) - STMicroelectronics
部品番号
コンポーネント説明
メーカー
STG3680
LOW VOLTAGE 0.5/0.8Ω MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE
STMicroelectronics
STG3680 Datasheet PDF : 11 Pages
1
2
3
4
5
6
7
8
9
10
STG3680
Table 6: DC Specifications
Test Conditions
Value
Symbol Parameter
V
CC
(V)
T
A
= 25°C
Min. Typ. Max.
-40 to 85°C
Min. Max.
-55 to 125°C
Min. Max.
V
IH
High Level 1.65-1.95
Input Voltage
2.3-2.5
0.65V
CC
1.4
0.65V
CC
1.4
0.65V
CC
1.4
2.7-3.0
1.4
1.4
1.4
3.3
1.5
1.5
1.5
3.6
1.7
1.7
1.7
4.3
2.2
2.2
2.2
V
IL
Low Level 1.65-1.95
Input Voltage
2.3-2.5
0.40
0.40
0.40
0.50
0.50
0.50
2.7-3.6
0.50
0.50
0.50
3.3
0.50
0.50
0.50
3.6
0.50
0.50
0.50
4.3
1.3
1.3
1.3
R
ON-S1
Switch
ON-S1
Resistance
(1)
4.3
3.0
2.7 V
S
=0V to V
CC
2.3
I
S
=100mA
0.80
0.80
0.80
2
0.80
0.80
0.80
2
1.8
4.0
5.0
1.65
4.0
5.0
R
ON-S2
Switch
ON-S2
Resistance
(1)
4.3
3.0
2.7 V
S
=0V to V
CC
2.3
I
S
=100mA
0.40
0.40
0.40
0.50
0.50
0.50
0.50
0.80
0.60
0.60
0.60
0.80
1.8
0.70 3.0
4.0
1.65
0.80 3.0
4.0
∆
R
ON
ON Resist.
Match
between
channels
2.7
V
S
=1.5V
I
S
=100mA
(1, 2)
0.06
R
FLAT
ON
4.3
Resistance
3.0
FLATNESS
(3)
2.7
2.3
V
S
=1.5V
I
S
=100mA
0.07 0.15
0.15
1.65
V
S
=0.8V
I
S
=100mA
I
OFF
OFF State
Leakage
Current
(nSn), (Dn)
4.3 V
S
=0.3 or 4V
±
10
±
100
I
IN
Input Leak.
Current
0 - 4.3 V
IN
= 0 to 3.6V
±
0.1
±
1
I
CC
Quiescent 1.65-4.3 V
IN
=V
CC
or
Supply
GND
Current (1)
±
0.05
±
0.2
±
1
Unit
V
V
Ω
Ω
Ω
Ω
nA
µ
A
µ
A
Note 1: Guaranteed by design
Note 2:
∆
R
ON
= R
ON(MAX)
- R
ON(MIN)
.
Note 3: Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified
analog signal ranges.
3/11
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]