STGP10N60 データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
メーカー
STGP10N60 Datasheet PDF : 8 Pages
| |||
STGP10N60L
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
Typ
1. 2
62.5
0. 1
ELECTRICAL CHARACTERISTICS (Tj = - 40 to 150 oC unless otherwise specified)
oC/W
oC/W
oC/W
OFF
Symbo l
VBR(c es)
ICES
IGES
P ar am et e r
Collector-Emitt er
Breakdown Voltage
Collector cut-off
(VGE = 0)
Gate-Emitter Leakage
Current (VCE = 0)
Test Conditions
IC = 250 µA VGE = 0
VCE = Max Rat ing
VCE = Max Rat ing
VGE = ± 15 V
Tj = 25 oC
Tj = 125 oC
VCE = 0
Min.
600
Typ. Max.
25
100
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
VGE(th)
VCE(SAT )
P ar am et e r
Gate Threshold
V ol ta ge
Collector-Emitt er
Saturation Voltage
IC
Collector Current
Test Conditions
VCE = VGE IC = 250 µA
VCE = VGE IC = 250 µ A Tj = 25 oC
VGE = 4.5 V
VGE = 4.5 V
VGE = 4.5 V
IC = 8 A Tj = - 40 oC
IC = 9.5 A Tj = 25 oC
IC = 8 A Tj = 150 oC
VGE = 4.5 V
VCE = 7 V
Min.
0.6
1.0
15
Typ.
1.5
1.4
1.25
45
Max.
2.4
2.0
2.0
Unit
V
V
V
V
V
A
DYNAMIC
Symbo l
gf s
Cies
Co es
Cres
QG
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Charge
Test Conditions
Min.
VCE =25 V
IC = 8 A Tj = 25 oC
7
Typ.
12
Max.
Unit
S
VCE = 25 V f = 1 MHz VGE = 0
1800 2600 pF
120 165
pF
19
26
pF
VCE = 400 V IC = 8 A VGE = 5 V
30
nC
FUNCTIONAL CHARACTERISTICS
Symbo l
P ar am et e r
ICL
Latching Current
ECF Forward Clamping
E ne rg y
EAR Reverse Avalanche
E ne rg y
Test Conditions
Vclamp = 480 V
Tj = 125 oC
dV/dt = 200 V/µs
Tstart = 55 oC
Vclamp = 480 V
IC = 10 A L = 4.2 mH - Single Pulse
Min.
20
210
10
Typ.
Max.
Unit
A
mJ
mJ
2/8
Share Link: 