STK0825F データシートの表示（PDF） - AUK -> KODENSHI CORP
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STK0825F Datasheet PDF : 8 Pages
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STK0825F
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
④
Forward transfer conductance ④
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test Condition
ID=250µA, VGS=0
ID=250µA, VDS= VGS
VDS=250V, VGS=0V
VDS=0V, VGS=±30V
VGS=10V, ID=4.0A
VDS=10V, ID=4.0A
VGS=0V, VDS=25V,
f=1MHz
VDD=125V, ID=8A
RG=25Ω
③④
VDS=125V, VGS=10V
ID=8A
③④
Min.
250
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
0.35
4.2
510
76
13
15
85
90
65
15
3
6
(Tc=25°C)
Max. Unit
-
V
4.0
V
1
µA
±100 nA
0.4
Ω
-
S
770
120
pF
20
-
-
ns
-
-
23
5
nC
9
Source-Drain Diode Ratings and Characteristics
Characteristic
Symbol
Test Condition
Source current
Source current(Plused)
Forward voltage
IS
Integral reverse diode
①
ISM
in the MOSFET
④
VSD
VGS=0V, IS=8A
Reverse recovery time
Reverse recovery charge
trr
Is=8A, VGS=0,
Qrr
diS/dt=100A/us
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=5.9mH, IAS=8A, VDD=50V, RG=27Ω
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
Min
-
-
-
-
-
Typ
-
-
-
222
1.45
(Tc=25°C)
Max Unit
8
A
32
1.4
V
-
ns
-
uC
KSD-T0O007-000
3
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