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E-STLC3075 データシートの表示(PDF) - STMicroelectronics

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E-STLC3075 Datasheet PDF : 36 Pages
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Electrical specification
3
Electrical specification
STLC3075
3.1
Absolute maximum rating
Table 3. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VPOS
A/BGND
Positive supply voltage
AGND to BGND
-0.4 to +13
V
-1 to +1
V
Vdig
Pin D0, D1, D2, DET, CKTTX
-0.4 to 5.5
V
Tj
Max. junction temperature
150
°C
Vbtot(1)
Vbtot=|VPOS|+|Vbat|. (Total voltage applied to the
device supply pins).
90
V
ESD rating
Human body model
Charged device model
±1750
V
±500
V
1. Vbat is self generated by the on-chip DC/DC converter and can be programmed via RF1 and RF2. RF1
and RF2 must be selected in order to fulfil the a.m. limits (see components tables).
3.2
Operating range
Table 4. Operating range
Symbol
Parameter
Value
Unit
VPOS
A/BGND
Positive supply voltage
AGND to BGND
4.5 to +12
V
-100 to +100
mV
Vdig
Pin D0, D1, D2, DET, CKTTX, PD
-0.25 to 5.25
V
Top
Vbat(1)
Ambient operating temperature range
Self generated battery voltage
-40 to +85
°C
-74 max.
V
1. Vbat is self generated by the on-chip DC/DC converter and can be programmed via RF1 and RF2. RF1
and RF2 must be selected in order to fulfil the a.m. limits (see Table 10: External components for
buckboost configuration)
3.3
Thermal data
Table 5. Thermal data
Symbol
Parameter
Rth j-amb Thermal resistance junction to ambient typical.
Value
60
Unit
°C/W
8/36

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