K822 データシートの表示（PDF） - STMicroelectronics

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K822

N-channel 25 V - 0.00175 Ω - 38 A - PolarPAK® STripFET™ Power MOSFET

STMicroelectronics 

STK822

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

Turn-off delay time

Fall time

Test conditions

VDD= 12.5 V, ID = 19 A,

RG = 4.7 Ω, VGS = 4.5 V

(see Figure 16)

VDD=15 V, ID= 19 A,

RG = 4.7 Ω, VGS= 4.5 V

(see Figure 16)

Min. Typ. Max. Unit

30.7

ns

60

ns

43.5

ns

13

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD= 19 A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 38 A, di/dt = 100 A/µs,

VDD= 20 V, Tj = 150 °C

(see Figure 15)

1. Pulse width limited by package

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min. Typ. Max. Unit

38 A

152 A

1.2 V

41

ns

45

nC

2.2

A

5/15

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