STP3NC70ZFP データシートの表示（PDF） - STMicroelectronics

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STP3NC70ZFP

N-CHANNEL 700V - 4.1Ω - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH™III MOSFET

STMicroelectronics 

STP3NC70Z/STP3NC70ZFP

THERMAL DATA

Rthj-case

Rthj-amb

Tl

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering Purpose

TO-220

1.92

TO-220FP

3.57

62.5

300

AVALANCHE CHARACTERISTICS

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Max Value

2.5

150

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max.

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

700

Breakdown Voltage

∆BVDSS/∆TJ Breakdown Voltage Temp.

ID = 1 mA, VGS = 0

0.8

Coefficient

IDSS

Zero Gate Voltage

VDS = Max Rating

1

Drain Current (VGS = 0)

VDS = Max Rating, TC = 125 °C

50

IGSS

Gate-body Leakage

VGS = ±20V

±10

Current (VDS = 0)

°C/W

°C/W

°C

Unit

A

mJ

Unit

V

V/°C

µA

µA

µA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10V, ID = 1.25 A

Min.

3

Typ.

4

4.1

Max.

5

4.7

Unit

V

Ω

DYNAMIC

Symbol

gfs (1)

Parameter

Forward Transconductance

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(on) x RDS(on)max,

ID = 1.25A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

2

530

50

7

Max.

Unit

S

pF

pF

pF

2/10

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