D95N04 データシートの表示（PDF） - STMicroelectronics

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D95N04

N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET™ Power MOSFET

STMicroelectronics 

STD95N04 - STP95N04

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID (1)

ID

IDM (2)

PTOT

Drain-source voltage (VGS=0)

Gate-source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

dv/dt (3) Peak diode recovery voltage slope

EAS (4) Single pulse avalanche energy

Tj

Operating junction temperature

Tstg Storage temperature

1. Current limited by package

2. Pulse width limited by safe operating area

3. ISD < 80 A, di/dt < 400A/µs, VDS < V(BR)DSS, Tj < Tjmax

4. Starting Tj = 25°C, ID = 40A, VDD = 30V

Value

40

± 20

80

65

320

110

0.73

8

400

-55 to 175

Unit

V

V

A

A

A

W

W/°C

V/ns

mJ

°C

Table 2. Thermal resistance

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-a Thermal resistance junction-ambient max

Rthj-pcb (1) Thermal resistance junction-ambient max

Tl

Maximum lead temperature for soldering purpose

1. When mounted on 1inch² FR-4 2Oz Cu board

Value

TO-220

DPAK

1.36

62.5

--

--

50

300

--

Unit

°C/W

°C/W

°C/W

°C

3/14

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