D95N04 データシートの表示（PDF） - STMicroelectronics

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D95N04

N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STD95N04 - STP95N04

(TCASE=25°C unless otherwise specified)

Table 3. Static

Symbol

Parameter

V(BR)DSS

Drain-source breakdown

voltage

IDSS

Zero gate voltage drain

current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 250µA, VGS= 0

40

VDS = Max rating,

VDS = Max rating,Tc = 125°C

V

10 µA

100 µA

VGS = ±20V

±200 nA

VDS= VGS, ID = 250µA

VGS= 10V, ID= 40A

2

4V

5.4 6.5 mΩ

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs (1) Forward transconductance

VDS =25V, ID=40A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS =25V, f=1 MHz, VGS=0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=20V, ID = 80A

VGS =10V

(see Figure 13)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min Typ. Max. Unit

100

S

2200

pF

580

pF

40

pF

40 54 nC

11

nC

8

nC

4/14

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