510601702 データシートの表示（PDF） - STMicroelectronics
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510601702 Datasheet PDF : 8 Pages
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STPS1045HR
Characteristics
Table 4.
Symbol
s
Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C
Characteristic
MIL-STD-750
test method
Test conditions
Values
Min. Max.
Units
IR
VF1(1)
VF2(1)
VF3(1)
Reverse Current
Forward Voltage
4016
4011
DC method, VR = 45V
Pulse method, IF = 3 A
Pulse method, IF = 20 A
Pulse method, IF = 20 A
-
100 µA
-
620 mV
-
750 mV
880 mV
C Capacitance
4001
VR = 5 V, F = 1 MHz
-
500 pF
Zth(j-c)(2)
Relative thermal impedance,
junction to case
3101
IH = 15 to 40 A, tH = 50 ms
IM = 50 mA, tmd = 100 µs
Calculate ΔVF(3) °C/W
1. Pulse width ≤ 300 µs, Duty Cycle ≤ 2%
2. Performed only during screening tests parameter drift values (initial measurements), go-no-go
3. The limits for ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the Rth(j-c) limits specified in maximum ratings.
Table 5. Electrical measurements at high and low temperatures (per diode)
Symbol
Characteristic
MIL-STD-750
test method
Test conditions(1)
Values
Min. Max.
Units
IR Reverse Current
4016
Tcase = +125 (+0, -5) °C
DC method, VR = 45 V
-
15
mA
VF1(2)
Tcase = +125 (+0, -5) °C
pulse method, IF = 3 A
-
570 mV
VF2(2) Forward Voltage
4011
Tcase = +125 (+0, -5) °C
pulse method, IF = 10 A
Tcase = -55 (+0, -5) °C
pulse method, IF = 10 A
-
700 mV
-
850 mV
VF3(2)
Tcase = +125 (+0, -5) °C
pulse method, IF = 20 A
-
800 mV
1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
2. Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go.
Doc ID 17640 Rev 1
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