STPS1545CF データシートの表示（PDF） - STMicroelectronics

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STPS1545CF

POWER SCHOTTKY RECTIFIER

STMicroelectronics 

STPS1545CT/CF/CG/CFP/CR

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

VRRM

IF(RMS)

IF(AV)

IFSM

Parameter

Repetitive peak reverse voltage

RMS forward current

Average forward

current δ = 0.5

TO-220AB / D2PAK

I2PAK

ISOWATT220AB

TO-220FPAB

Surge non repetitive forward current

IRRM Repetitive peak reverse current

IRSM

PARM

Tstg

Tj

dV/dt

Non repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

Tc = 157°C Per diode

Value Unit

45

V

20

A

7.5

A

Tc = 130°C Per device

15

tp = 10 ms

Sinusoidal

tp = 2 µs square

F = 1kHz

tp = 100 µs square

tp = 1µs Tj = 25°C

150

A

1

A

2

A

2700

W

-65 to +175 °C

175

°C

10000 V/µs

* : dPtot <

1

thermal runaway condition for a diode on its own heatsink

dTj

Rth( j − a)

THERMAL RESISTANCES

Symbol

Parameter

Value Unit

Rth (j-c) Junction to case

TO-220AB / D2PAK / I2PAK

Per diode 3.0 °C/W

Total

1.7

Rth (c)

ISOWATT220AB / TO-220FPAB

TO-220AB / D2PAK / I2PAK

ISOWATT220AB / TO-220FPAB

Per diode 5.5

Total

4.2

Coupling 0.35

2.9

When the diodes 1 and 2 are used simultaneously:

∆ Tj (diode 1) = P (diode1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c)

STATIC ELECTRICAL CHARACTERISTICS (Per diode)

Symbol

Parameter

Tests Conditions

Min. Typ. Max. Unit

IR * Reverse leakage current Tj = 25°C

VR = VRRM

Tj = 125°C

100 µA

5

15

mA

VF * Forward voltage drop

Tj = 125°C

Tj = 25°C

Tj = 125°C

IF = 7.5 A

IF = 15 A

IF = 15 A

0.5 0.57 V

0.84

0.65 0.72

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation :

P = 0.42 x IF(AV) + 0.020 IF2(RMS)

2/8

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