STPS16L40 データシートの表示（PDF） - STMicroelectronics
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STPS16L40 Datasheet PDF : 4 Pages
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Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values) (per
diode).
STPS16L40CT
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration .
IM(A)
120
100
80
60
40
IM
20
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4 δ = 0.2
0.2
δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
IR(mA)
2E+2
1E+2
1E+1
1E+0
Tj=150°C
Tj=125°C
Tj=75°C
1E-1
1E-2
0
Tj=25°C
VR(V)
5 10 15 20 25 30 35 40
C(pF)
2000
1000
500
200
100
1
2
F=1MHz
Tj=25°C
VR(V)
5
10
20
50
Fig. 7: Forward voltage drop versus forward
current (maximum values) (per diode).
IFM(A)
100.0
Typical values
Tj=150°C
10.0
Tj=125°C
Tj=25°C
1.0
Tj=75°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
3/4
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