STPS40170C-Y データシートの表示（PDF） - STMicroelectronics
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STPS40170C-Y Datasheet PDF : 9 Pages
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STPS40170C-Y
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current (per diode)
22 PF(AV)(W)
20
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ=1
18
16
14
12
10
8
6
T
4
2
IF(AV)(A)
δ=tp/T
tp
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
Figure 2. Average forward current versus ambient
temperature (δ = 0.5, per diode)
22 IF(AV)(A)
20
18
16
14
12
10
8
6
T
4
2
δ=tp/T
0
0
25
tp
50
Rth(j-a) = Rth(j-c)
Rth(j-a) = 15 °C/W
T a mb (°C)
75
100
125
150
175
Figure 3. Normalized avalanche power derating versus
junction temperature (Tj = 125 °C)
PARM (t p )
1 PARM(10 µs)
0.1
0.01
0.001
1
t p(µs)
10
100
1000
Figure 4. Relative variation of thermal impedance junction
to case versus pulse duration
1.0 Zth(j-c) /Rth(j-c)
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
0.1
Single pulse
0.0
1.E-03
1.E-02
T
t P(s)
δ =tp/T
1.E-01
tp
1.E+00
Figure 5. Reverse leakage current versus reverse voltage
applied (typical values, per diode)
Figure 6. Junction capacitance versus reverse voltage
applied (typical values, per diode)
1.E+05 IR(µA)
1000 C(pF)
1.E+04
1.E+03
1.E+02
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 75 °C
100
1.E+01
Tj = 50 °C
1.E+00
Tj = 25 °C
1.E-01
VR(V)
10
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
1
10
F = 1 MHz
VOSC = 30 mVRMS
Tj = 25 °C
VR(V)
100
1000
DS6956 - Rev 2
page 3/9
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