STD2040PL データシートの表示（PDF） - Samhop Mircroelectronics

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STD2040PL

P-Channel Enhancement Mode MOSFET

Samhop Mircroelectronics 

S T U/D2040P L

P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

P a ra meter

S ymbol Condition

Min Typ C Max Unit

5 OFF CHARACTERISTICS

Drain-S ource Breakdown Voltage

Zero Gate Voltage Drain C urrent

Gate-Body Leakage

ON CHARACTERISTICS b

Gate Threshold Voltage

BVDSS VGS =0V, ID =-250uA -40

IDSS

VDS =-32V, VGS= 0V

IGSS

VGS = 20V, VDS= 0V

V

1 uA

100 nA

VGS(th) VDS =VGS, ID =-250uA -0.8 -1.5 -2.0 V

Drain-S ource On-S tate R esistance

R DS(ON)

VGS =-10V, ID= -16A

VGS =-4.5V, ID= -10A

35 45 m ohm

46 60 m ohm

On-S tate Drain Current

ID(ON) VDS =-5V, VGS = -10V 50

Forward Transconductance

gFS

DYNAMIC CHARACTERISTICS c

VDS = -10V, ID = -15A

Input Capacitance

Output Capacitance

R everse Transfer Capacitance

C IS S

VDS =-10V, VGS = 0V

COSS

f =1.0MHZ

CRSS

Gate resistance

R g VGS =0V, VDS = 0V, f=1.0MHZ

SWITCHING CHARACTERISTICS c

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

Fall Time

tD(ON) VDD = -24V

tr ID = -16 A

tD(O F F )

VGS = -10V

R GEN = 4.7 ohm

tf

Total Gate C harge

Qg VDS =-24V, ID =-16A,VGS =-10V

A

15

S

1115 1250 PF

200 225 PF

125 140 PF

3

ohm

11.5 13 ns

7.3 8.5 ns

53.1 62 ns

31.8 37 ns

19.5 22 nC

Gate-S ource Charge

Gate-Drain C harge

VDS =-24V, ID =-16A,VGS =-4.5V

Qgs VDS =-24V, ID = -16A

Qgd VGS =-10V

2

9.4 11 nC

4.1 4.8 nC

2.8 3.2 nC

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