SUB70N06-14(1998_01) データシートの表示（PDF） - Vishay Semiconductors
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SUB70N06-14 Datasheet PDF : 3 Pages
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SPICE Device Model SUP/ SUB70N06-14
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Diode Forward Voltagea
Dynamicb
VGS(th)
ID(on)
rDS(on)
VSD
VDS = VGS, ID = 1 µA
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, Tj = 125°C
VGS = 10 V, ID = 30 A, Tj = 175°C
IS = 70 A, VGS = 0 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 60 A
VDD = 30 V, RL = 0.47 Ω
ID ≅ 60 A, VGEN = 10 V, RG = 2.5 Ω
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature
Typical
2.41
324
0.0138
0.0198
0.0230
0.92
2419
492
127
45.3
12
16
8
14
32
39
Unit
V
A
Ω
V
pf
nC
ns
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2
Document Number: 70541
19-Jan-98
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