SUB85N03-04P(2002) データシートの表示（PDF） - Vishay Semiconductors

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SUB85N03-04P
(Rev.:2002)

N-Channel 30-V (D-S) 175
°C MOSFET

Vishay Semiconductors 

SUP/SUB85N03-04P

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature

2.0

100

VGS = 10 V

ID = 30 A

1.6

Source-Drain Diode Forward Voltage

1.2

TJ = 150_C

10

0.8

TJ = 25_C

0.4

0.0

–50 –25 0

25 50 75 100 125 150 175

TJ – Junction Temperature (_C)

1

0

0.3

0.6

0.9

1.2

VSD – Source-to-Drain Voltage (V)

1000

Avalanche Current vs. Time

100

IAV (A) @ TA = 25_C

10

IAV (A) @ TA = 150_C

1

0.1

0.00001 0.0001 0.001 0.01

0.1

1

tin (Sec)

Drain Source Breakdown vs.

Junction Temperature

45

40

ID = 250 mA

35

30

25

–50 –25 0

25 50 75 100 125 150 175

TJ – Junction Temperature (_C)

www.vishay.com

4

Document Number: 71241

S-20120—Rev. B, 12-Mar-02

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