T431616B データシートの表示（PDF） - Taiwan Memory Technology
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T431616B Datasheet PDF : 31 Pages
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tm TE
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T431616B
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Voltage on Any Pin Relative To Vss
V I N,VOUT
-1.0 to 4.6
Supply Voltage Relative To Vss
V D D,VDDQ
-1.0 to 4.6
Short circuit Output Current
Power Dissipation
Iout
50
PD
1
Operating Temperature
TOPR
-10 to +85
Storage Temperature
Tstg
-55 to 125
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
mA
W
°C
°C
RECOMMENDED DC OPERATING CONDITIONS
(TA = -10 to +85° C , Voltage referenced to VS S=0V)
Parameter
Symbol
Min.
Typ
Max.
Supply Voltage
V D D,VDDQ
2.7
3.3
3.6
Input High Voltage
VIH
2.0
3.0
VDD+0.3V
Input Low Voltage
VIL
-0.3
0
0.8
Output logic high voltage
VOH
2.4
-
-
Output logic low voltage
VO L
-
-
0.4
Input leakage current
IIL
-5
-
5
Output leakage current
IOL
-5
-
5
Note : 1. VIH (max) = 4.6V AC for pulse width ≤ 10ns acceptable.
2. VIL (min) = -1.0V AC for pulse width ≤ 10ns acceptable.
3. Any input 0V ≤ VIN ≤ VDD+ 0.3V , all other pin are not under test = 0V.
4. Dout = disable , 0V ≤ VOUT ≤ VDD .
Unit Notes
V
V
1
V
2
V IOH=-2mA
V
IOL=2mA
uA
3
uA
4
CAPACITANCE
(TA =25°C ,VDD=3.3V, f = 1MHz)
Pin
Symbol
Min
Max
Unit
CLOCK
CCLK
2.5
4.0
pF
ADDRESS
CADD
2.5
5.0
pF
DQ0 ~ DQ15
COUT
4.0
6.5
pF
RAS,CAS,WE,CS,CKE,LDQM,
CIN
2.5
5.0
pF
UDQM
Taiwan Memory Technology, Inc. reserves the right P. 5
to change products or specifications without notice.
Publication Date: JUL. 2001
Revision:A
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