T431616D データシートの表示（PDF） - Taiwan Memory Technology

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T431616D

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

T431616D/E

Absolute Maximum Rating

Symbol

Item

VIN, VOUT

VDD, VDDQ

TOPR

TSTG

PD

IOUT

Input, Output Voltage

Power Supply Voltage

Operating Temperature

Storage Temperature

Power Dissipation

Short Circuit Output Current

Rating

-5/6/7

- 1.0 ~ 4.6

-1.0 ~ 4.6

0 ~ 70

- 55 ~ 125

1

50

Unit Note

V

1

V

1

°C

1

°C

1

W

1

mA

1

Recommended D.C. Operating Conditions (Ta = -0~70°C)

Symbol

VDD

VDDQ

VIH

VIL

Parameter

Power Supply Voltage

Power Supply Voltage(for I/O Buffer)

LVTTL Input High Voltage

LVTTL Input Low Voltage

Min.

3.0

3.0

2.0

- 0.3

Typ.

Max.

Unit

3.3

3.6

V

3.3

3.6

V

-

VDDQ+0.3

V

-

0.8

V

Note

2

2

2

2

Capacitance (VDD = 3.3V, f = 1MHz, Ta = 25°C)

Symbol

Parameter

Min.

Max.

Unit

CI

Input Capacitance

2

5

pF

CI/O

Input/Output Capacitance

4

7

pF

Note: These parameters are periodically sampled and are not 100% tested.

TM Technology Inc. reserves the right

P. 17

to change products or specifications without notice.

Publication Date: FEB. 2007

Revision: A

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