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T431616D データシートの表示(PDF) - Taiwan Memory Technology

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T431616D Datasheet PDF : 74 Pages
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CH
T431616D/E
The read data appears on the DQs subject to the values on the LDQM/UDQM inputs two clocks earlier (i.e.
LDQM/UDQM latency is two clocks for output buffers). A read burst without the auto precharge function may
be interrupted by a subsequent Read or Write command to the same bank or the other active bank before the end
of the burst length. It may be interrupted by a BankPrecharge/ PrechargeAll command to the same bank too. The
interrupt coming from the Read command can occur on any clock cycle following a previous Read command
(refer to the following figure).
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND
READ A READ B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CAS# latency=1
tCK1, DQ's
CAS# latency=2
tCK2, DQ's
CAS# latency=3
tCK3, DQ's
DOUT A0 DOUT B0
DOUT B1 DOUT B2
DOUT B3
DOUT A0 DOUT B0
DOUT B1 DOUT B2
DOUT B3
DOUT A0 DOUT B0
DOUT B1 DOUT B2
DOUT B3
Read Interrupted by a Read (Burst Length = 4, CAS# Latency = 1, 2, 3)
The LDQM/UDQM inputs are used to avoid I/O contention on the DQ pins when the interrupt comes from
a Write command. The LDQM/UDQM must be asserted (HIGH) at least two clocks prior to the Write command
to suppress data-out on the DQ pins. To guarantee the DQ pins against I/O contention, a single cycle with high-
impedance on the DQ pins must occur between the last read data and the Write command (refer to the following
three figures). If the data output of the burst read occurs at the second clock of the burst write, the
LDQM/UDQM must be asserted (HIGH) at least one clock prior to the Write command to avoid internal bus
contention.
CLK
DQM
T0
T1
T2
T3
T4
T5
T6
T7
T8
COMMAND
NOP
READ A
NOP
NOP
NOP
NOP
WRITE B
NOP
DQ's
: "H" or "L"
DOUT A0
Must be Hi-Z before
the Write Command
DINB0
DINB1
Read to Write Interval (Burst Length 4, CAS# Latency = 3)
NOP
DI NB 2
TM Technology Inc. reserves the right
P. 7
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A

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