T835H データシートの表示（PDF） - STMicroelectronics
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T835H Datasheet PDF : 10 Pages
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Characteristics
T835H, T850H
Figure 3.
RMS on-state current versus
ambient temperature (Epoxy
printed circuit board FR4,
copper thickness = 35 µm)
IT(RMS) (A)
4.5
4.0
3.5
α=180 °
D²PAK
SCU=1 cm²
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Tamb(°C)
25
50
75
100
125
150
Figure 4. Variation of thermal impedance
versus pulse duration
Zth(°C/W)
1.0E+02
1.0E+01
1.0E+00
Zth(j-a)
Zth(j-c)
1.0E-01
1.0E-03
1.0E-02
1.0E-01
tP(s)
1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 5. On-state characteristics (maximum Figure 6. Surge peak on-state current versus
values)
number of cycles
ITM(A)
100
Tj=150 °C
10
Tj=25 °C
VTM(V)
Tj max. :
Vt0 = 0.80 V
Rd = 52 mΩ
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
ITSM(A)
90
80
70
60
50
40
30
20
10
0
1
Non repetitive
Tj initial=25 °C
Repetitive
Tc=125 °C
Number of cycles
10
100
t=20ms
One cycle
1000
Figure 7.
Non-repetitive surge peak on-state Figure 8.
current for a sinusoidal pulse with
width tp < 10 ms and corresponding
value of I2t
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
ITSM(A), I²t (A²s)
10000
Tj initial=25 °C
IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]
2.5
dI/dt limitation: 50 A/µs
2.0
IGT
1000
1.5
100
ITSM
IH & IL
1.0
I²t
0.5
10
0.01
0.10
tP(ms)
1.00
10.00
0.0
Tj(°C)
-40 -20 0 20 40 60 80 100 120 140 160
4/10
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