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TA8176F データシートの表示(PDF) - Toshiba

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TA8176F Datasheet PDF : 13 Pages
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Maximum Ratings (Ta = 25°C)
TA8176SN / F
Characteristic
Symbol
Rating
Unit
Supply voltage
TA8176SN
TA8176F
TA8176SN
Power dissipation
TA8176F
Operating temperature
Storage temperature
VCC
15
V
9
750
PD (Note)
mW
350
Topr
-25~75
°C
Tstg
-55~150
°C
(Note) Derated above Ta = 25°C in the proportion of 6mW / °C for TA8176SN and of 2.8mW / °C for TA8176F.
Electrical Characteristics (unless otherwise specified, VCC = 5V, Ta = 25°C, f = 98MHz,
fm = 1kHz, f = ±22.5kHz, SW1 = on, SW2 = off)
Characteristic
Supply current
Conversion gain
Symbol
ICC1
ICC2
GC1
GC2
Test
Cir-
Test Condition
cuit
1 Vin = 0
2 Vin = 0
fin = 98MHz
Vin = 50dBµV EMF
1
GC1
=
20og10
Vout
Vin
fin = 180MHz
Vin = 55dBµV EMF
2
GC2
=
20og10
Vout
Vin
Min. Typ. Max. Unit
16.5
22
mA
17.0 22.5
37
41
dB
36
40
Local OSC voltage
Local OSC buffer output
voltage
IF amp. Output voltage
Local OSC stop voltage
Vosc1
Vosc2
Vo (osc1)
Vo (osc2)
Vout1
Vout2
Vstop1
Vstop2
3 fOSC = 108.7MHz
3
fOSC = 190.7MHz
SW2 = On
3 fOSC = 108.7MHz
3
fOSC = 190.7MHz
SW2 = On
1
fin = 98MHz
Vin = 80dBµV EMF
2
fin = 98MHz
Vin = 80dBµV EMF
3 fOSC = 108.7MHz
3
fOSC = 190.7MHz
SW2 = On
275
150
mVrms
45
80
mVrms
80
130
mVrms
130
2.5
2.8
V
2.7
3.0
4
2002-10-30

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