TC1073-3.0VCH713 データシートの表示（PDF） - Microchip Technology

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TC1073-3.0VCH713

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

Microchip Technology 

TC1072/TC1073

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings†

Input Voltage .........................................................6.5V

Output Voltage........................... (-0.3V) to (VIN + 0.3V)

Power Dissipation................Internally Limited (Note 6)

Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V

Operating Temperature Range...... -40°C < TJ < 125°C

Storage Temperature..........................-65°C to +150°C

† Note: Stresses above those listed under "Absolute

Maximum Ratings" may cause permanent damage to

the device. These are stress ratings only and functional

operation of the device at these or any other conditions

above those indicated in the operation sections of the

specifications is not implied. Exposure to Absolute

Maximum Rating conditions for extended periods may

affect device reliability.

TC1072/TC1073 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise noted, VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 μF, SHDN > VIH, TA = +25°C.

Boldface type specifications apply for junction temperatures of -40°C to +125°C.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VIN

IOUTMAX

Input Operating Voltage

Maximum Output Current

2.7

—

50

—

100

—

6.0

V Note 9

—

mA TC1072

—

mA TC1073

VOUT

Output Voltage

VR – VR ±0.5% VR + 2.5%

V

Note 1

2.5%

TCVOUT

VOUT Temperature Coefficient

—

20

—

ppm/°C Note 2

—

40

—

ΔVOUT/ΔVIN Line Regulation

ΔVOUT/VOUT Load Regulation

—

0.05

0.35

% (VR + 1V) ≤ VIN ≤ 6V

—

0.5

2.0

%

IL = 0.1 mA to IOUTMAX

(Note 3)

VIN-VOUT

Dropout Voltage

—

2

—

mV IL = 0.1 mA

—

65

—

IL = 20 mA

—

85

120

IL = 50 mA

—

180

250

IL = 100 mA (Note 4),

TC1073

IIN

Supply Current

—

IINSD

Shutdown Supply Current

—

PSRR

Power Supply Rejection Ratio

—

IOUTSC

Output Short Circuit Current

—

ΔVOUT/ΔPD Thermal Regulation

—

TSD

Thermal Shutdown Die Temperature

—

ΔTSD

Thermal Shutdown Hysteresis

—

eN

Output Noise

—

50

0.05

64

300

0.04

160

10

260

80

µA SHDN = VIH, IL = 0 (Note 8)

0.5

µA SHDN = 0V

—

dB FRE ≤ 1 kHz

450

mA VOUT = 0V

—

V/W Notes 5, 6

—

°C

—

°C

—

nV/√Hz IL = IOUTMAX

470 pF from Bypass to GND

Note 1: VR is the regulator output voltage setting. For example: VR = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.

2: TC VOUT = (VOUTMAX – VOUTMIN) x 106

VOUT x ΔT

3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range

from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal

regulation specification.

4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.

5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or

line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the

thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate

thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.

7: Hysteresis voltage is referenced by VR.

8: Apply for Junction Temperatures of -40°C to +85°C.

9: The minimum VIN has to justify the conditions = VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX.

DS21354D-page 2

© 2007 Microchip Technology Inc.

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