TC1073-28VCH データシートの表示（PDF） - Microchip Technology

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TC1073-28VCH

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

Microchip Technology 

TC1072/TC1073

5.0 TYPICAL CHARACTERISTICS (CONTINUED)

Measure Rise Time of 3.3V LDO with Bypass Capacitor

Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA

VIN = 4.3V, Temp = 25°C, Rise Time = 448µS

Measure Rise Time of 3.3V LDO without Bypass Capacitor

Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA

VIN = 4.3V, Temp = 25°C, Rise Time = 184µS

VSHDN

VSHDN

VOUT

VOUT

Measure Fall Time of 3.3V LDO with Bypass Capacitor

Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 50mA

VIN = 4.3V, Temp = 25°C, Fall Time = 100µS

VSHDN

VOUT

Measure Fall Time of 3.3V LDO without Bypass Capacitor

Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA

VIN = 4.3V, Temp = 25°C, Fall Time = 52µS

VSHDN

VOUT

© 2002 Microchip Technology Inc.

DS21354B-page 11

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