TC1073-28VCH データシートの表示（PDF） - Microchip Technology

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TC1073-28VCH

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

Microchip Technology 

TC1072/TC1073

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Input Voltage......................................................... 6.5V

Output Voltage ...........................(-0.3V) to (VIN + 0.3V)

Power Dissipation ............... Internally Limited (Note 6)

Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V

Operating Temperature Range ......-40°C < TJ < 125°C

Storage Temperature ......................... -65°C to +150°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC1072/TC1073 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: VIN = VOUT + 1V, IL = 0.1mA, CL = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface

type specifications apply for junction temperatures of -40°C to +125°C.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VIN

IOUTMAX

Input Operating Voltage

Maximum Output Current

2.7

—

50

—

100

—

6.0

V Note 9

—

mA TC1072

—

mA TC1073

VOUT

TCVOUT

Output Voltage

VOUT Temperature Coefficient

VR – 2.5%

—

—

VR ±0.5%

20

40

VR + 2.5%

—

—

V

ppm/°C

Note 1

Note 2

∆VOUT/∆VIN Line Regulation

∆VOUT/VOUT Load Regulation

—

0.05

0.35

% (VR + 1V) ≤ VIN ≤ 6V

—

0.5

2.0

%

IL = 0.1mA to IOUTMAX

(Note 3)

VIN-VOUT

Dropout Voltage

—

—

—

—

IIN

Supply Current

—

IINSD

Shutdown Supply Current

—

PSRR

Power Supply Rejection Ratio

—

IOUTSC

Output Short Circuit Current

—

∆VOUT/∆PD Thermal Regulation

—

TSD

Thermal Shutdown Die Temperature

—

∆TSD

Thermal Shutdown Hysteresis

—

eN

Output Noise

—

2

65

85

180

50

0.05

64

300

0.04

160

10

260

—

mV IL = 0.1mA

—

IL = 20mA

120

IL = 50mA

250

IL = 100mA (Note 4), TC1073

80

µA SHDN = VIH, IL = 0 (Note 8)

0.5

µA SHDN = 0V

—

dB FRE ≤ 1kHz

450

mA VOUT = 0V

—

V/W Notes 5, 6

—

°C

—

°C

—

nV/√Hz IL = IOUTMAX

470pF from Bypass to GND

SHDN Input

VIH

SHDN Input High Threshold

45

—

—

%VIN VIN = 2.5V to 6.5V

VIL

SHDN Input Low Threshold

—

—

15

%VIN VIN = 2.5V to 6.5V

Note 1: VR is the regulator output voltage setting. For example: VR = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.

2: TC VOUT = (VOUTMAX – VOUTMIN) x 106

VOUT x ∆T

3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range

from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal

regulation specification.

4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.

5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or

line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the

thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate

thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.

7: Hysteresis voltage is referenced by VR.

8: Apply for Junction Temperatures of -40°C to +85°C.

9: The minimum VIN has to justify the conditions = VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to IOUTMAX.

© 2002 Microchip Technology Inc.

DS21354B-page 3

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